[HTML][HTML] Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors
BaTiO 3 thin films with different annealing times were grown on LSMO/STO (001) substrates
by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the
interfacial layer in BaTiO 3 was detected in the x-ray diffraction results, and the ordered–
unordered–ordered lattice transformation caused by oxygen vacancies' filling was thought to
be the reason. The ferroelectric domain was also confirmed to form during such an
annealing process according to the piezoresponse force microscopy, transmission electron …
by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the
interfacial layer in BaTiO 3 was detected in the x-ray diffraction results, and the ordered–
unordered–ordered lattice transformation caused by oxygen vacancies' filling was thought to
be the reason. The ferroelectric domain was also confirmed to form during such an
annealing process according to the piezoresponse force microscopy, transmission electron …
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