Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - pubs.aip.org
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …
被引用次数：24 相关文章

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - inria.hal.science
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …

[引用][C] Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - cir.nii.ac.jp
Cumulative effects of electrode and dielectric surface modifications on pentacene-based
transistors | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 …

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - cnrs.hal.science
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - pubs.aip.org
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - ui.adsabs.harvard.edu
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - hal.em-lyon.com
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - hal.science
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …
[PDF] researchgate.net

[PDF][PDF] Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - APPLIED PHYSICS …, 2012 - researchgate.net
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

M Devynck, P Tardy, G Wantz, Y Nicolas… - Applied Physics …, 2012 - hal.umontpellier.fr
Surface modifications of the dielectric and the metal of pentacene-based field effect
transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap …