Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo - Applied Physics Letters, 2012 - pubs.aip.org
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect
transistors by N, N′-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN 2). We show that an …
transistors by N, N′-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN 2). We show that an …
[引用][C] Surface doping in T6/PDI-8CN (2) heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo… - APPLIED PHYSICS …, 2012 - iris.unina.it
Surface doping in T6/PDI-8CN(2) heterostructures investigated by transport and photoemission
measurements IRIS IRIS Home Sfoglia Macrotipologie & tipologie Autore Titolo Riviste Serie …
measurements IRIS IRIS Home Sfoglia Macrotipologie & tipologie Autore Titolo Riviste Serie …
[PDF][PDF] Surface doping in T6/PDI-8CN2 Heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo, M Barra… - researchgate.net
Surface doping in T6/ PDI-8CN2 Heterostructures investigated by transport and photoemission
measurements Page 1 1 Surface doping in T6/ PDI-8CN2 Heterostructures investigated by …
measurements Page 1 1 Surface doping in T6/ PDI-8CN2 Heterostructures investigated by …
[PDF][PDF] Surface doping in T6/PDI-8CN2 Heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo, M Barra… - academia.edu
Surface doping in T6/ PDI-8CN2 Heterostructures investigated by transport and photoemission
measurements Page 1 1 Surface doping in T6/ PDI-8CN2 Heterostructures investigated by …
measurements Page 1 1 Surface doping in T6/ PDI-8CN2 Heterostructures investigated by …
Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti… - Applied Physics …, 2012 - ui.adsabs.harvard.edu
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect
transistors by N, N'-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN 2). We show that an …
transistors by N, N'-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN 2). We show that an …
Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo… - Applied Physics …, 2012 - pubs.aip.org
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect
transistors by N, N0-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN2). We show that an …
transistors by N, N0-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN2). We show that an …
Surface doping in T6/PDI-8CN2 Heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo… - arXiv preprint arXiv …, 2012 - arxiv.org
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect
transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the …
transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the …
[PDF][PDF] Surface doping in T6/PDI-8CN2 Heterostructures investigated by transport and photoemission measurements
L Aversa, R Verucchi, R Tatti, FV Di Girolamo, M Barra… - academia.edu
Surface doping in T6/ PDI-8CN2 Heterostructures investigated by transport and photoemission
measurements Page 1 1 Surface doping in T6/ PDI-8CN2 Heterostructures investigated by …
measurements Page 1 1 Surface doping in T6/ PDI-8CN2 Heterostructures investigated by …