We introduce extensions to a recently developed numerical model to understand the origin
of universal Fermi level pinning of perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) …

We measure the gap density of states and the Fermi level position in thin-film transistors
based on pentacene and dinaphtho [2, 3-b: 2′, 3′-f] thieno [3, 2-b] thiophene (DNTT) films …

Effective interface modification of a pentacene field-effect transistor with a submicron
channel is performed. The two interfaces between the pentacene channel and the substrate …

A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in
order to fabricate high-quality pentacene thin-film transistors (TFTs), both in bottom contact …

We use a photoreactive interfacial layer of poly (endo, exo-bis (2-nitrobenzyl) bicyclo [2.2. 1]
hept-5-ene-2, 3-dicarboxylate)(PBHND) between the gate dielectric and the pentacene …

In this paper, it was demonstrated that pentacene thin-film transistors (TFTs) were fabricated
with an organic adhesion layer between an organic semiconductor and a gate insulator. In …

Photoemission measurements reveal energy level shifts toward the Fermi level when a
strong electron acceptor (tetrafluoro-tetracyanoquinodimethane, F4-TCNQ) is deposited on …

Optimized pentacene thin film transistors have been achieved by two technological self-
assembled monolayers (SAM) treatments, with surface modification of 3 …

The transport and morphology of macroscopic organic transistors have been thoroughly
explained. However, the relationship between charge transport and the morphology of …

Using Penning ionization electron spectroscopy, which provides information on the local
distribution of individual orbitals exposed outside the outermost surface layer, ultra-thin films …