Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors

HW Zan, CW Chou, CH Wang, HT Song… - Journal of Applied …, 2009 - pubs.aip.org
This study presents carbon attachment on an aluminum nitride (AlN) gate dielectric to
improve the device performance of pentacene-based organic thin-film transistors (OTFTs) …

Electronic States of Pentacene Thin Films at Interfaces with Ionic-Liquid Layers Probed by Photoelectron Yield Spectroscopy

K Eguchi, H Murata - The Journal of Physical Chemistry C, 2023 - ACS Publications
Understanding semiconductor–ionic-liquid (IL) interfaces is essential for achieving high-
performance electronic devices. However, it is difficult to analyze the interfacial electronic …

Effects of UV/ozone treatment of a polymer dielectric surface on the properties of pentacene thin films for organic transistors

SJ Han, JH Kim, J Won Kim, CK Min, SH Hong… - Journal of Applied …, 2008 - pubs.aip.org
Ultraviolet photoelectron spectroscopy and atomic force microscopy (AFM) were used to
investigate the energy level alignment and growth morphology of pentacene (Pn) films …

Interfacial electronic properties of pentacene tuned by a molecular monolayer of

X Liu, Y Zhan, S Braun, F Li, M Fahlman - Physical Review B—Condensed …, 2009 - APS
Fine-tuning charge injection barriers between organic materials and electrodes is critical to
optimize organic electronic device performance. Here we demonstrate that by modifying …

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

Y Li, Q Liu, XZ Wang, T Sekitani, T Someya… - Science China …, 2012 - Springer
We herein report the effective performance enhancement of the pentacene-based organic
thin film transistors with silicon dioxide dielectric by inserting a thin metal phthalocyanines …

Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

SG Jeong, HY Park, MH Lim, WS Jung, HY Yu, Y Roh… - Organic …, 2012 - Elsevier
In this work, we investigated the material properties of pentacene films with XRD and AFM
analyses as it were annealed from 25 to 150° C in N2 ambient. Electrical characterization of …

Vapor-phase-processed fluorinated self-assembled monolayer for organic thin-film transistors

J Roh, C Lee, J Kwak, BJ Jung, H Kim - Journal of the Korean Physical …, 2015 - Springer
A vapor-phase-processed fluorinated silazane self-assembled monolayer (SAM), 1, 3-bis
(trifluoropropyl)-1, 1, 3, 3-tetramethyldisilazane (FPDS), was introduced as a surface …

Pentacene devices: Molecular structure, charge transport and photo response

B Nickel, M Fiebig, S Schiefer, M Göllner… - … status solidi (a), 2008 - Wiley Online Library
In this feature article, we will discuss to which extend the peculiar growth properties of
pentacene on metallic contacts and on gate dielectrics contribute to the device performance …

Disorder-mediated ordering by self-interfactant effect in organic thin film growth of pentacene on silicon

P Kury, KR Roos, D Thien, S Möllenbeck, D Wall… - Organic electronics, 2008 - Elsevier
We have studied the morphology of pentacene films on different silicon surfaces with
orientations between Si (111) and Si (001). Pentacene molecules are immobile on the Si …

High mobility top-gated pentacene thin-film transistors

CR Newman, RJ Chesterfield, MJ Panzer… - Journal of applied …, 2005 - pubs.aip.org
A common device geometry for measuring the electrical characteristics of organic
semiconductors is the thin-film organic field-effect transistor (OTFT). Mostly for reasons of …