The charge-transfer states and the carrier concentration of the native oxide Si (111) surface
adsorbed with 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8-tetracyanoquinodimethane (F 4-TCNQ) were …

We have investigated the valence electronic states of 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8-
tetracyanoquinodimethane (F4-TCNQ) on the 2-methylpropene chemisorbed Si (100)(2× 1) …

Chlorine oxidation is important methods for improvement of many properties such as
passivation of mobile oxide charge, breakdown strength or enhancement of the minority …

We examine how the electronic structure (via synchrotron radiation XPS, UPS, and
NEXAFS) and the molecular orientation (via NEXAFS) of a strong acceptor molecule …

Due to its dominant role in silicon devices technologies [1, 2] the SiO2/Si interface has been
intensively studied in the last five decades. The ability to form a chemically stable protective …

We investigated the chemical state and molecular orientation of 2, 3, 5, 6-tetrafluoro-7, 7, 8,
8-tetracyanoquinodimethane (F4-TCNQ) adsorbed on a hydrogen-terminated Si (111)(1× 1) …

This work presents new data on modifications to Si〈 111〉 surfaces by reduction of
diazonium salts. It is shown that a monolayer thickness requires a careful control of the …

The energy distribution of interface states at ultrathin oxide/Si (100) interfaces is obtained
using a new method, ie, x-ray photoelectron spectroscopy measurements under biases …

High‐resolution synchrotron radiation photoemission has been used to examine the
oxidation states of Si atoms near the Si/SiO2 interface. The quality of the starting Si surfaces …

Functionalization of semiconductor surfaces with organic moieties can change the charge
distribution, surface dipole, and electric field at the interface. The modified electric field will …