Three-terminal three-color n-SiC: H/a-Si: H-based TCO/PINIP/TCO/PIN/metal detectors are
presented. Assemblies having different surface roughness of transparent conducting oxide …

SiC is a highly useful material for optical sensing devices in the UV due to its large bandgap.
It also exhibits a robust physical nature, making it suitable for harsh environment …

This paper presents the design, fabrication process, and performance evaluation of a two-
dimensional hydrogenated amorphous silicon (a-Si: H) nip photodiode array, developed …

This study examines the electrical and optical properties of p-Si/n-SiC heterojunctions
subjected to UV and visible light in addition to the conduction mechanism of the device. The …

The optoelectronic properties of high‐resistivity p‐type hexagonal silicon carbide (6H‐SiC)
have been investigated using lateral photoconductive switches. Both photovoltaic and …

This paper summarizes recent advances of integrated hybrid InP/silicon-on-insulator lasers
and transmitters based on a wafer bonding technique. First, directly modulated hybrid III-V/Si …

An integrated pin/JFET/resistor has been developed using a GaInAs epitaxial structure
grown on a planar substrate A four-layered structure allows separate optimization of both …

In this work waveguide structures using the cubic polytype of SiC are analyzed. The β-SiC-
on-insulator wageguides were fabricated by two different methods. In the first case, a …

To realize the benefits of SiC power electronics and optically controlled device technology,
we present in this letter optically activated SiC pin diodes for high-temperature and high …

Codesign and integration of optical modulators and CMOS drivers is crucial for high-speed
silicon photonic (SiP) transmitters to reach their full potential for low-cost, low-power …