[HTML][HTML] High− Performance 4H− SiC UV p− i− n Photodiode: Numerical Simulations and Experimental Results
In this work, the optical response of a high− performance 4H− SiC− based p− i− n ultraviolet
(UV) photodiode was studied by means of an ad hoc numerical model. The spectral …
(UV) photodiode was studied by means of an ad hoc numerical model. The spectral …
Reduction of dark current in photodiodes by the use of a resonant cavity
BN Sverdlov, AE Botchkarev, N Teraguchi… - Electronics Letters, 1993 - IET
The advantages of using a resonant cavity enhancement scheme to decrease the dark
current of heterojunction photodiodes are considered. It is shown that the employment of …
current of heterojunction photodiodes are considered. It is shown that the employment of …
Two-dimensional a-Si: H nip photodiode array for low-level light detection
Y Vygranenko, JH Chang… - IEEE journal of quantum …, 2005 - ieeexplore.ieee.org
This paper presents the design, fabrication process, and performance evaluation of a two-
dimensional hydrogenated amorphous silicon (a-Si: H) nip photodiode array, developed …
dimensional hydrogenated amorphous silicon (a-Si: H) nip photodiode array, developed …
100-Channel WDM Rx-type PIC on InP for use of low-cost and low power consumption electronics
100-Channel WDM Rx-type PIC on InP for use of low-cost and low power consumption
electronics Page 1 ECOC 2014, Cannes - France We.2.4.5 100-Channel WDM Rx-Type PIC on …
electronics Page 1 ECOC 2014, Cannes - France We.2.4.5 100-Channel WDM Rx-Type PIC on …
[PDF][PDF] OPTICAL RESPONSE STUDY OF THE Al/a-SiC: H SCHOTTKY DIODE FOR DIFFERENT SUBSTRATE TEMPERATURES OF THE rf SPUTTERED a-SiC: H …
L Magafas - Active & Passive Electronic Components, 2003 - Citeseer
In the present work, Schottky diodes of Al/a-SiC: H included in the structure Al/a-SiC: H/c-Si
(n)/Al were fabricated and their optical response was studied in the wavelength region from …
(n)/Al were fabricated and their optical response was studied in the wavelength region from …
Modeling quantum efficiency of ultraviolet 6H–SiC photodiodes
A Panferov, SK Kurinec - IEEE transactions on electron devices, 2011 - ieeexplore.ieee.org
The quantum efficiency of pn junction 6H-SiC ultraviolet (UV) photodiodes has been
theoretically modeled for the doping concentration range of 10 14-10 20 cm-3. The …
theoretically modeled for the doping concentration range of 10 14-10 20 cm-3. The …
Optical receiver with widely tunable sensitivity in BiCMOS technology
N Tadic, H Zimmermann - … on Circuits and Systems I: Regular …, 2008 - ieeexplore.ieee.org
A monolithically integrated optical receiver with voltage-controlled sensitivity in 0.6-μ m
BiCMOS technology is presented. The transimpedance variations are achieved by varying …
BiCMOS technology is presented. The transimpedance variations are achieved by varying …
Photonic Amorphous Pi'n/pin SiC Optical Filter Under Controlled Near UV Irradiation
In this paper, we present a wavelength selector based on a monolithic multilayer pi'n/pin a-
SiC: H optical filter that requires appropriate near-ultraviolet steady states optical switches to …
SiC: H optical filter that requires appropriate near-ultraviolet steady states optical switches to …
Коротковолновый дифференциальный фотоприемник на основе кремния
ВВ Гаврушко, АС Ионов, ОР Кадриев… - Журнал технической …, 2017 - mathnet.ru
Описан фотоприeмник на основе кремния, содержащий два одинаковых по площади $
n^{+} $–$ p $-фотодиода. Один из фотодиодов имел широкую спектральную …
n^{+} $–$ p $-фотодиода. Один из фотодиодов имел широкую спектральную …