Silicon-based single quantum dot emission in the telecoms C-band
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
Silicon-based single quantum dot emission in the telecoms C-band
JR Orchard, C Woodhead, J Wu, M Tang… - ACS …, 2017 - eprints.whiterose.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
[PDF][PDF] Silicon-Based Single Quantum Dot Emission in the Telecoms C‑Band
JR Orchard, C Woodhead, J Wu, M Tang, R Beanland… - 2017 - scholar.archive.org
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band
JR Orchard, C Woodhead, J Wu, M Tang… - ACS …, 2017 - discovery.ucl.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
Silicon-based single quantum dot emission in the telecoms C-band
JR Orchard, C Woodhead, J Wu, M Tang… - ACS …, 2017 - wrap.warwick.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
Silicon-based single quantum dot emission in the telecoms C‑band
JR Orchard, C Woodhead, J Wu, M Tang… - ACS …, 2017 - orca.cardiff.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
[PDF][PDF] Silicon-Based Single Quantum Dot Emission in the Telecoms C‑Band
JR Orchard, C Woodhead, J Wu, M Tang, R Beanland… - 2017 - core.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
Silicon-based single quantum dot emission in the telecoms C-band
JR Orchard, C Woodhead, J Wu, M Tang… - ACS …, 2017 - eprints.soton.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
[PDF][PDF] Silicon-Based Single Quantum Dot Emission in the Telecoms C‑Band
JR Orchard, C Woodhead, J Wu, M Tang, R Beanland… - 2017 - core.ac.uk
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …
(1530− 1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …