Silicon-based single quantum dot emission in the telecoms C-band
ACS Photonics, 2017•ACS Publications
We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the
emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines,
representing emission from single QDs, are observed out to wavelengths as long as 1540
nm. Comparison is made to the optical properties of a nominally identical active region
structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 …
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the
emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines,
representing emission from single QDs, are observed out to wavelengths as long as 1540
nm. Comparison is made to the optical properties of a nominally identical active region
structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 …
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
ACS Publications
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