… a novel AlGaN/GaN HFET which had an open gate structure and a new working mechanism
was designed. The open-gate … material used in the experiment was grown on a 350 μm SiC …

… material used in this study was grown on a 350 μm SiC … GaN buffer layer, 1.5 nm AlN insertion
layer, 23 nm Al 0.25 Ga 0.75 … = v om /v in = 14, which shows the effectiveness of sample 1 …

… analysis of the thermal impact on the microwave performance of high electron-mobility
transistors (HEMTs) based … The gate lengths of the GaAs and GaN devices are 0.25 μm and 0.5 …

… , suppressed electric field crowding at the edge of the gate, … The PAFP-HFET with a
gate-to-drain distance of L gd = 6 μm, … Ga 0.70 N/Al 0.25 Ga 0.75 N heterostructure polarization …

… (fT) of 40 GHz and microwave power density (Pout) of 1.3 W/… 1(b) and incorporates a 0.25
μm thick Al0.4Ga0.6N channel … devices would enable better RF performance. CW large signal …

… heterostructure field effect transistors, rendering its application as power amplifiers, Monolithic
Microwave … N/GaN HEMT device, where x = 0.25 are assumed to have grown in the [0001] …

… is introduced to improve microwave power performance. The … were fabricated on Al 0.25
GaN/GaN heterostructures on a GaN … of AlGaN/GaN HEMT on a GaN substrate for microwave …

… heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a
high-quality 0.25 µm … GaN HEMTs without an AlN-exclusion layer using an optimized AlGaN/GaN …

… AlGaN/GaN heterostructure used for this study is grown by metal-organic chemical vapor …
-power-density 0.25 μm gatelength AlGaN/GaN high-electron-mobility transistors on semi-…

… 0.25 μm Gate HEMT with an associated gain of 8.97 dB at 18 GHz and justify the suitability of
AlGaN/GaN … On evaluating these cases for NFmin under microwave C – and X – bands, it is …