In this study, a submicron AlGaN/GaN heterostructure field-effect transistor with a split-gate
structure was fabricated. Through measurements, it was found that the drain-source current …

In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate
technology was fabricated. Sample transistors of different structures and sizes were …

In this study, a split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary
gate was fabricated. Through experiment and analysis, it was discovered that by applying a …

In this study, the ungated AlGaN/GaN devices with special mesa structures were designed.
The hypothesis of effective width expansion was tested experimentally by using ungated …

In this study, we fabricated two similar split-gate AlGaN/GaN heterostructure field-effect
transistors (SG AlGaN/GaN HFETs). However, minor variations in structural design resulted …

We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for
high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN …

The first demonstration of the m-plane AlGaN/GaN heterojunction field-effect transistor was
reported. This transistor exhibited enhancement-mode operation, with the threshold voltage …

We demonstrate a dual-gate (DG) AlGaN/GaN high-electron-mobility transistor (HEMT)
structure with enhancement-mode (E-mode) operation. The DG device consists of an E …

In this work, we fabricated AlInGaN/GaN FinFETs and compare electrical performances with
those of AlGaN/GaN FinFETs in different channel structures, such as single and double …

The recessed trapezoidal groove dual‐gate profile is achieved by the low power CF4
plasma etching based on the principle of ion‐scattering. The recessed trapezoidal groove …