Photoconductive near-infrared sensors have the advantages of low cost and simple
structure, but their overall performances are dissatisfactory yet. As potential candidates for …

Low trap‐state density, high carrier mobility, and efficient charge carrier collection are key
parameters for photodetectors with high sensitivity and fast response time. This study …

Recently, lead-based halide perovskites have gained extensive attention due to their
outstanding optoelectronic properties. However, the toxicity of lead would seriously limit its …

Organohalide perovskites have emerged as promising light‐sensing materials because of
their superior optoelectronic properties and low‐cost processing methods. Recently …

Recently, the newly emerging lead-halide perovskites have received tremendous attention
in the photodetection field because of their intrinsic large light absorption and high well …

Near-infrared (NIR) II detection at weak flux intensity is required in medical imaging and is
especially urgent in light of the low quantum efficiency of NIR-II dyes. The low responsivity of …

Photodetectors (PDs), especially those that respond in the infrared region, are highly
desirable and have a wide range of applications ranging from cell phones, cameras, and …

Lead chalcogenide quantum dots (QDs) are one of the next generations of ideal narrow
bandgap infrared semiconductors, due to their succinct solution processing, low‐cost …

Perovskite‐based photodetectors exhibit potential applications in communication,
neuromorphic chips, and biomedical imaging due to their outstanding photoelectric …

Tin–lead perovskite photodetectors are attractive alternatives to silicon counterparts for near-
infrared photodetection, due to their outstanding optoelectronic properties, solution …