Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures
M Kunrugsa - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
… consists of both quantum ring (QR) and quantum dot (QD) … In this work, the carrier dynamics
in the GaSb/GaAs QRDSs … type-II band alignment in the GaSb/GaAs NSs, the dynamics of …
in the GaSb/GaAs QRDSs … type-II band alignment in the GaSb/GaAs NSs, the dynamics of …
Optical absorption coefficient calculations of GaSb/GaAs quantum dots for intermediate band solar cell applications
M Kunrugsa - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
… the absorption region … Type-II nanostructures become interesting choices due to long carrier
lifetime. In respect of the IBSC applications, GaSb/GaAs QDs and QRs exhibiting the type-II …
lifetime. In respect of the IBSC applications, GaSb/GaAs QDs and QRs exhibiting the type-II …
Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures and their potential for intermediate band solar cells
M Kunrugsa - Journal of Physics D: Applied Physics, 2023 - iopscience.iop.org
… GaSb/GaAs nanostructures (NSs), such as quantum dots (… (PL) and carrier dynamics of
GaSb/GaAs QRDSs have already … nature of the type-II band alignment in the GaSb/GaAs NSs [28…
GaSb/GaAs QRDSs have already … nature of the type-II band alignment in the GaSb/GaAs NSs [28…
Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1− x/GaAs quantum dots including effects of photoexcited carriers
… 5 because GaSb/GaAs heterostructures have a type-II band … To clarify the carrier dynamics,
we measured the PL decay … and thus, the photons are mainly absorbed in GaAs, and then the …
we measured the PL decay … and thus, the photons are mainly absorbed in GaAs, and then the …
Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition
S Wang, S Wang, X Yang, Z Lv, H Chai, L Meng… - Heliyon, 2023 - cell.com
… Carrier dynamics of type-ii inas∕gaas quantum dots covered by a thin gaas1−xsbx layer. …
Furthermore, the infrared absorption almost disappears when Sb composition is 28%. The …
Furthermore, the infrared absorption almost disappears when Sb composition is 28%. The …
Photonic crystal circular nanobeam cavity laser with type-II GaSb/GaAs quantum rings as gain material
HT Lin, KS Hsu, CC Chang, WH Lin, SY Lin… - Scientific reports, 2020 - nature.com
… The optical characteristics and carrier dynamics of GaSb/GaAs quantum dots (QDs) systems
have been investigated 3,4,5,6,7,8 and utilized in various applications including lasers 9,10,…
have been investigated 3,4,5,6,7,8 and utilized in various applications including lasers 9,10,…
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP (001)
… carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (… alignment, the so-called type-II,
we examine here the blue-shift … 2.2 eV) [47] to minimize absorption in substrate, or by optical …
we examine here the blue-shift … 2.2 eV) [47] to minimize absorption in substrate, or by optical …
Electronic properties of type-II /GaAs quantum rings for applications in intermediate band solar cells
… carrier generation due to absorption of photons having energy … a discrete density of states,
eg in a quantum dot (QD), or (ii) … structure engineering of type-II GaSb/GaAs quantum rings for …
eg in a quantum dot (QD), or (ii) … structure engineering of type-II GaSb/GaAs quantum rings for …
Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories
S Fang, R Hao, L Zhang, J Guo, W Liu - Frontiers in Physics, 2022 - frontiersin.org
… potential wells to achieve continuous light absorption in the wavelength range of 2–30 μm
[14]. … Therefore, it is mainly used to simulate quantum wells, SL quantum dots, and long-period …
[14]. … Therefore, it is mainly used to simulate quantum wells, SL quantum dots, and long-period …
Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
X Liu, J Liu, B Liang, Y Wang, Y Guo, C Wang… - Applied Surface …, 2022 - Elsevier
… the carrier dynamics and luminescence intensity of SQDs. … single-layer SQDs and buried
quantum dots (BQDs) grown on … absorption of GaAs at 820 nm and the resonance absorption …
quantum dots (BQDs) grown on … absorption of GaAs at 820 nm and the resonance absorption …