… By the direct observation of phonon polaritons in suspended monolayer h-BN, we prove
that these HPhPs can exist in a spectral range above the TO frequency and exhibit ultrahigh …

… We highlight the spectral coincidence of direct and indirect optical transitions in the near
band gap absorption of hBN. This peculiarity has so far hindered the comprehensive under…

… Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for
electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical …

… structural and electronic properties remains unrevealed to date. Here, we provide the direct
observation of structural and electronic … and to the calculated band structure, our results show …

… ) and many-body GW calculations of the electronic band gaps of monolayer and bulk
hexagonal boron nitride (hBN). We find the monolayer band gap to be indirect. GW predicts much …

… boron nitride materials are semiconductors with large band gaps. However, the monolayer
di-BN possesses a moderate direct band gap … correction enlarges the band gap to 2.446 eV, …

… Another interesting observation is the correlation between electronic structure and energetics
of h-BN nanoribbons due to edge termination. Although its wide bandgap primarily renders …

… BZ) of bulk h-BN and the band structure of h-BN in the AA′ stacking sequence for bulk and
… controversial debate concerning its electronic bandgap structure and excitonic properties. …

… In the case of structures A and B, the results for the bandgap are 138 meV and 2 meV, … the
DFT band gap problem, we can affirm that our results give a maximum for the bandgap. Still, …

… uniaxial material hexagonal boron nitride. We show that the excitation of bulk and surface
… Our work provides a systematic study for understanding bulk and surface polaritons excited …