Vertical field effect light emitting transistors (VFELETs) have an advantage over lateral ones
because they have the ability to conveniently decrease the channel volume. In the VFELET …

… The surface and cross-sectional morphologies of as-fabricated films were observed by a
field-emission scanning electron microscope (SEM, Regulus 8100, Hitachi, Japan). The …

… SEM images were scanned by field emission scanning electron microscope (FE-SEM,
sirion200, FEI Corp., Netherlands). Absorption spectra were measured on a Hitachi U-3900H UV–…

… The top-view surface morphologies of the films were measured by field-emission scanning
electron microscopy (FESEM—JEOL-6330 Cryo, Peabody, MA, USA). PL was measured by …

… Images of field emission scanning electron microscope (FESEM) and energy dispersive
spectroscopy (EDS) of MoS 2 film and PEDOT:PSS film are exhibited in Fig. S5. The additional …

Perovskite based photodetectors and hybrid devices possess distinctive properties which
have enabled considerable practical applications since perovskite is an ideal candidate for …

Recently, CH 3 NH 3 PbX 3 (X = Cl, Br, I) perovskites have been widely reported in photoelectric
fields. However, the lower absorption efficiency and poor stability have restricted their …

… TEM was recorded using a FEI Tecnai G2S-Twin with a field-emission gun operating at 200
kV equipped. Analysis of elements in polycrystalline CsPbX 3 @zeolite was performed using …

… This approach is often used to compute the mechanical and physical characteristics of
solids in single crystals [78]. The elastic moduli B and G H depicted the resistance of the solid …

… The thickness of Si QDs was measured by using a field-emission scanning electron
microscope (Zeiss Sigma 300). Raman spectra of the MoS 2 and Si QDs/MoS 2 films were were …