Hot-carrier degradation in power LDMOS: Selective LOCOS-versus STI-based architecture
AN Tallarico, S Reggiani, R Depetro… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
In this paper, we present an analysis of the degradation induced by hot-carrier stress in new
generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with …
generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with …
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture
AN Tallarico, S Reggiani, R Depetro, AM Torti… - IEEE JOURNAL OF …, 2018 - cris.unibo.it
In this paper, we present an analysis of the degradation induced by hot-carrier stress in new
generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with …
generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with …