Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

JD Cushen, I Otsuka, CM Bates, S Halila, S Fort… - ACS …, 2012 - ACS Publications
Block copolymers demonstrate potential for use in next-generation lithography due to their
ability to self-assemble into well-ordered periodic arrays on the 3–100 nm length scale. The …
被引用次数：240 相关文章

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

JD Cushen, I Otsuka, CM Bates, S Halila, S Fort… - ACS Nano, 2012 - hero.epa.gov
Block copolymers demonstrate potential for use in next-generation lithography due to their
ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The …

[引用][C] Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

J Cushen, I Otsuka, C Bates, S Halila, S Fort, C Rochas… - ACS Nano, 2012 - hal.science
Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic
Applications - Archive ouverte HAL Accéder directement au contenu Documentation FR …

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

JD Cushen, I Otsuka, CM Bates, S Halila… - ACS …, 2012 - pubmed.ncbi.nlm.nih.gov
Block copolymers demonstrate potential for use in next-generation lithography due to their
ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The …

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications.

JD Cushen, I Otsuka, CM Bates, S Halila, S Fort… - ACS Nano, 2012 - europepmc.org
Block copolymers demonstrate potential for use in next-generation lithography due to their
ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The …

[引用][C] Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

J Cushen, I Otsuka, C Bates, S Halila, S Fort… - ACS …, 2012 - hal.univ-grenoble-alpes.fr
Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic
Applications - Université Grenoble Alpes Accéder directement au contenu Documentation FR …

[引用][C] Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

JD Cushen, I Otsuka, CM Bates, S Halila, S Fort… - ACS Nano, 2012 - cir.nii.ac.jp
Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic
Applications | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 …

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

JD Cushen, I Otsuka, CM Bates, S Halila, S Fort… - ACS …, 2012 - experts.umn.edu
Block copolymers demonstrate potential for use in next-generation lithography due to their
ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The …

[引用][C] Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

J Cushen, I Otsuka, C Bates, S Halila, S Fort… - ACS …, 2012 - hal.univ-grenoble-alpes.fr
Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic
Applications - Université Grenoble Alpes Accéder directement au contenu Documentation FR …