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[HTML][HTML] Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO x gate dielectric

Y Li, T Chen, X Ju, T Salim - Nanoscale, 2022 - pubs.rsc.org
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and
a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The …
被引用次数：11 相关文章

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

Y Li, T Chen, X Ju, T Salim - Nanoscale, 2022 - pubmed.ncbi.nlm.nih.gov
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and
a high-κ (the dielectric constant is about 42.6) TaO x gate dielectric layer is fabricated. The …

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

Y Li, T Chen, X Ju, T Salim - Nanoscale, 2022 - dr.ntu.edu.sg
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and
a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The …

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric.

Y Li, T Chen, X Ju, T Salim - Nanoscale, 2022 - europepmc.org
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and
a high-κ (the dielectric constant is about 42.6) TaO x gate dielectric layer is fabricated. The …
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[PDF][PDF] Transparent Electronic and Photoelectric Synaptic Transistors Based on the Combination of InGaZnO Channel and TaOx Gate Dielectric

Y Li, T Chen, X Ju, T Salimb - pdfs.semanticscholar.org
Supplementary Information Transparent Electronic and Photoelectric Synaptic Transistors
Based on the Combination of InGaZnO Chan Page 1 Supplementary Information …