Effects of vacancy defects on graphene nanoribbon field effect transistor
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond‐CMOS nanoelectronics because of the special electric …
candidates for beyond‐CMOS nanoelectronics because of the special electric …
Effects of vacancy defects on graphene nanoribbon field effect transistor.
S Chang, Y Zhang, Q Huang… - Micro & Nano Letters …, 2013 - search.ebscohost.com
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
Effects of vacancy defects on graphene nanoribbon field effect transistor
S Chang, Y Zhang, Q Huang, H Wang, G Wang - Micro & Nano Letters, 2013 - IET
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
Effects of vacancy defects on graphene nanoribbon field effect transistor
S Chang, Y Zhang, Q Huang, H Wang, G Wang - IET Micro & Nano Letters, 2013 - infona.pl
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
Effects of vacancy defects on graphene nanoribbon field effect transistor
S Chang, Y Zhang, Q Huang, H Wang… - Micro & Nano …, 2013 - search.proquest.com
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …
candidates for beyond-CMOS nanoelectronics because of the special electric characteristics …