Type-II InAs/GaAsSb quantum dot solar cells with GaAs interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (~ 1 ns). To investigate this, InAs QD/GaAs 1-x Sb x …
被引用次数：32 相关文章
[PDF] core.ac.uk

[PDF][PDF] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE JOURNAL OF …, 2018 - core.ac.uk
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (∼ 1 ns). To investigate this, InAs QD/GaAs1–x Sbx …
[PDF] academia.edu

[PDF][PDF] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE JOURNAL OF …, 2018 - academia.edu
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (∼ 1 ns). To investigate this, InAs QD/GaAs1–x Sbx …
[PDF] researchgate.net

[PDF][PDF] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam, P Jurczak… - researchgate.net
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (∼ 1 ns). To investigate this, InAs QD/GaAs1–x Sbx …

Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, K Sablon, P Lam… - IEEE Journal of …, 2018 - discovery.ucl.ac.uk
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (∼ 1 ns). To investigate this, InAs QD/GaAs 1--xSbx …

[引用][C] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE JOURNAL OF …, 2018 - qmro.qmul.ac.uk
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[PDF] archive.org

[PDF][PDF] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE JOURNAL OF …, 2018 - scholar.archive.org
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (∼ 1 ns). To investigate this, InAs QD/GaAs1–x Sbx …

[引用][C] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE Journal of …, 2018 - cir.nii.ac.jp
Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer | CiNii Research CiNii
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[PDF] academia.edu

[PDF][PDF] Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

D Kim, S Hatch, J Wu, KA Sablon, P Lam… - IEEE JOURNAL OF …, 2018 - academia.edu
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (∼ 1 ns). To investigate this, InAs QD/GaAs1–x Sbx …