A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme
IEEE Journal of Solid-State Circuits, 2003 - ieeexplore.ieee.org
A 256× 144-bit TCAM is designed in 0.18-μm CMOS. The proposed TCAM cell uses 4T
static storage for increased density. The proposed match-line (ML) sense scheme reduces …
static storage for increased density. The proposed match-line (ML) sense scheme reduces …
[引用][C] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I ARSOVSKI - IEEE Journal of Solid-State Circuits, 2003 - cir.nii.ac.jp
A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a
Current-Race Sensing Scheme | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ …
Current-Race Sensing Scheme | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler, A Sheikholeslami - IEEE JOURNAL OF SOLID …, 2003 - Citeseer
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - eecg.utoronto.ca
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - academia.edu
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler… - IEEE JOURNAL OF …, 2003 - scholar.archive.org
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - eecg.toronto.edu
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - researchgate.net
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[引用][C] A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme
A Igor, C Trevis… - IEEE Journal of Solid …, 2003 - ui.adsabs.harvard.edu
A ternary content-addressable memory (TCAM) based on 4T static storage and including a
current-race sensing scheme - NASA/ADS Now on home page ads icon ads Enable full ADS view …
current-race sensing scheme - NASA/ADS Now on home page ads icon ads Enable full ADS view …
[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme
I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - eecg.toronto.edu
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …