A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme

IEEE Journal of Solid-State Circuits, 2003 - ieeexplore.ieee.org
A 256× 144-bit TCAM is designed in 0.18-μm CMOS. The proposed TCAM cell uses 4T
static storage for increased density. The proposed match-line (ML) sense scheme reduces …
被引用次数：320 相关文章

[引用][C] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I ARSOVSKI - IEEE Journal of Solid-State Circuits, 2003 - cir.nii.ac.jp
A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a
Current-Race Sensing Scheme | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ …
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[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler, A Sheikholeslami - IEEE JOURNAL OF SOLID …, 2003 - Citeseer
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF] utoronto.ca

[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - eecg.utoronto.ca
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF] academia.edu

[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - academia.edu
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF] archive.org

[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler… - IEEE JOURNAL OF …, 2003 - scholar.archive.org
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF] toronto.edu

[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - eecg.toronto.edu
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …
[PDF] researchgate.net

[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - researchgate.net
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …

[引用][C] A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme

A Igor, C Trevis… - IEEE Journal of Solid …, 2003 - ui.adsabs.harvard.edu
A ternary content-addressable memory (TCAM) based on 4T static storage and including a
current-race sensing scheme - NASA/ADS Now on home page ads icon ads Enable full ADS view …
[PDF] toronto.edu

[PDF][PDF] A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including a Current-Race Sensing Scheme

I Arsovski, T Chandler… - IEEE JOURNAL OF SOLID …, 2003 - eecg.toronto.edu
CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed
match-line (ML) sense scheme reduces power consumption by minimizing switching activity …