High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

M Gutiérrez, C Masante, N Rouger, D Eon… - Applied Physics …, 2018 - pubs.aip.org
In this letter, we report on the improvement of gate controlled Al 2 O 3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …
被引用次数：27 相关文章

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, M Gutiérrez, C Masante, N Rouger… - Applied Physics …, 2018 - cir.nii.ac.jp
抄録< jats: p> In this letter, we report on the improvement of gate controlled Al2O3/(100)
boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide …

[引用][C] High quality Al 2 O 3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, C Gutierrez, C Masante, NC Rouger… - Applied Physics …, 2018 - hal.science
High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication -
Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) …

[引用][C] High quality Al 2 O 3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, C Gutierrez, C Masante… - Applied Physics …, 2018 - hal.univ-grenoble-alpes.fr
High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication -
Université Grenoble Alpes Accéder directement au contenu Documentation FR Se connecter …

High quality Al 2 O 3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, M Gutiérrez, C Masante, N Rouger… - APPLIED PHYSICS …, 2018 - pubs.aip.org
In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …
[PDF] academia.edu

[PDF][PDF] High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, M Gutiérrez, C Masante… - APPLIED PHYSICS …, 2018 - academia.edu
In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, M Gutiérrez Peinado, C Masante, N Rouger… - 2018 - rodin.uca.es
In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, M Gutiérrez, C Masante… - Applied Physics …, 2018 - ui.adsabs.harvard.edu
In this letter, we report on the improvement of gate controlled Al 2 O 3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …

[引用][C] High quality Al 2 O 3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

TT Pham, C Gutierrez, C Masante… - Applied Physics …, 2018 - hal.univ-grenoble-alpes.fr
High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication -
Université Grenoble Alpes Accéder directement au contenu Documentation FR Se connecter …