Hot-carrier effects in submicrometre MOS VLSIs

E Takeda - IEE Proceedings I (Solid-State and Electron Devices), 1984 - IET
Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-
carrier injection mechanisms,(b) the device degradation,(c) the hot-carrier resistant device …
被引用次数：107 相关文章

[引用][C] Hot-carrier effects in submicrometer MOS VLSIs

E TAKEDA - IEE Proceedings, 1984 - cir.nii.ac.jp

Hot-carrier effects in submicrometre MOS VLSIs

E Takeda - IEE Proceedings: Solid-State Electron Devices, 1984 - ui.adsabs.harvard.edu
Several aspects of hot-carrier effects in submicron MOS VLSIs are described:(1) the hot-
carrier injection mechanism;(2) device performance degradation (threshold-voltage shift and …

[引用][C] Hot-carrier effects in submicrometre MOS VLSIs

E Takeda - IEE Proceedings I-Solid-State and Electron Devices, 1984 - ieeexplore.ieee.org
Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-
carrier injection mechanisms,(b) the device degradation,(c) the hot-carrier resistant device …

Hot-carrier effects in submicrometre MOS VLSIs

E Takeda - IEE Proceedings I Communications, Speech and …, 1984 - infona.pl
Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-
carrier injection mechanisms,(b) the device degradation,(c) the hot-carrier resistant device …

[引用][C] Hot-carrier effects in submicrometre MOS VLSIs

E TAKEDA - IEE proceedings. Part I. Solid-state and electron …, 1984 - pascal-francis.inist.fr
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[引用][C] Hot-carrier effects in submicrometre MOS VLSIs

E Takeda - IEE Proceedings I Solid State and Electron Devices, 1984 - cir.nii.ac.jp
Hot-carrier effects in submicrometre MOS VLSIs | CiNii Research CiNii 国立情報学研究所 学術
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[引用][C] Hot-carrier effects in submicrometre MOS VLSIs

E TAKEDA - IEE proceedings. Part I. Solid-state …, 1984 - Institution of Electrical Engineers