Low-frequency and random telegraph noise in 14-nm bulk si charge-trap transistors

M Gorchichko, EX Zhang, M Reaz, K Li… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and
40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology …
被引用次数：5 相关文章

[引用][C] Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

M Gorchichko, EX Zhang, M Reaz, K Li… - … on Electron Devices, 2023 - ui.adsabs.harvard.edu
Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Low-Frequency …