Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance

A Salah, A Shaker, M El-Banna… - … Science and Technology, 2021 - iopscience.iop.org
In this work, the effect of the source doping profile due to possible fabrication aspects has
been investigated and discussed for both carbon nanotube tunneling field effect transistors …
被引用次数：3 相关文章

Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance

A Salah, A Shaker, M El-Banna… - Semiconductor …, 2021 - ui.adsabs.harvard.edu
In this work, the effect of the source doping profile due to possible fabrication aspects has
been investigated and discussed for both carbon nanotube tunneling field effect transistors …

Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance

A Salah, A Shaker, M El-Banna… - … Science and Technology, 2021 - inis.iaea.org
[en] In this work, the effect of the source doping profile due to possible fabrication aspects
has been investigated and discussed for both carbon nanotube tunneling field effect …
[PDF] researchgate.net

[PDF][PDF] Impact of Source Doping Profile on the Performance of CNT TFETs and MOSFETs: Design Aspects for Fabrication Tolerance

A Salah, A Shaker, M El-Banna, M Ossaimee - researchgate.net
In this work, the effect of the source doping profile due to possible fabrication aspects has
been investigated and discussed for both carbon nanotube TFETs and MOSFETs. A …