Mechanochemical and thermal treatment for surface functionalization to reduce the activation temperature of In-Ga-Zn-O thin-film transistors
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors.
IS Lee, YJ Tak, BH Kang, H Yoo, S Jung… - ACS Applied Materials …, 2020 - europepmc.org
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors
IS Lee, YJ Tak, BH Kang, H Yoo… - … applied materials & …, 2020 - pubmed.ncbi.nlm.nih.gov
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors
IS Lee, YJ Tak, BH Kang, H Yoo… - ACS Applied …, 2020 - yonsei.elsevierpure.com
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors
IS Lee, YJ Tak, BH Kang, H Yoo… - ACS Applied …, 2020 - yscholarhub.yonsei.ac.kr
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …