A position detector based on the lateral photoeffect in a-Si: H/metal (Ti, Mo) multilayers

AN Panckow, J Bläsing, TP Drüsedau - Journal of non-crystalline solids, 1993 - Elsevier
The lateral photoeffect in multilayer systems (MLS) consisting of ten to thirty periods of
alternately sputtered hydrogenated amorphous silicon (a-Si: H) and transition metals (Ti …
被引用次数：15 相关文章

A position detector based on the lateral photoeffect in a-Si: H/metal (Ti, Mo) multilayers

AN Panckow, J Bläsing… - Journal of Non …, 1993 - ui.adsabs.harvard.edu
The lateral photoeffect in multilayer systems (MLS) consisting of ten to thirty periods of
alternately sputtered hydrogenated amorphous silicon (a-Si: H) and transition metals (Ti …

[引用][C] A position detector based on the lateral photoeffect in a-Si: H/metal (Ti, Mo) multilayers

AN PANCKOW, J BLÄSING… - Journal of non …, 1993 - pascal-francis.inist.fr
A position detector based on the lateral photoeffect in a-Si:H/metal (Ti,Mo) multilayers CNRS
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[引用][C] A position detector based on the lateral photoeffect in a-Si: H/metal (Ti, Mo) multilayers

AN PANCKOW, J BLÄSING, TP DRÜSEDAU - Journal of non-crystalline …, 1993 - Elsevier