Hot-carrier effects in scaled MOS devices

E Takeda - Microelectronics Reliability, 1993 - Elsevier
A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are
reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot …

[引用][C] Hot-carrier effects in sclaed MOS devices

E TAKEDA - Microelectronics and reliability, 1993 - pascal-francis.inist.fr
Hot-carrier effects in sclaed MOS devices CNRS Inist Pascal-Francis CNRS Pascal and
Francis Bibliographic Databases Simple search Advanced search Search by classification …

AC Hot-Carrier Effects in Scaled MOS Devices

E Takeda, R Izawa, K Umeda, R Nagai - 29th International Reliability Physics … - infona.pl
An universal guideline on AC hot-carrer effects is proposed from the viewpoints of 1) gate
pulse fall/rise time, 2) AC frequency, and 3) device structures (single drain (SD), LDD, and …

[引用][C] AC hot-carrier effects in scaled MOS devices

E TAKEDA - IEEE IRPS, 1991 - cir.nii.ac.jp
AC hot-carrier effects in scaled MOS devices | CiNii Research CiNii 国立情報学研究所 学術
情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学図書館の本を …

Hot-carrier effects in scaled MOS devices

E Takeda - Microelectronics Reliability, 1993 - ui.adsabs.harvard.edu
A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are
reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot …

AC hot-carrier effects in scaled MOS devices

E Takeda, R Izawa, K Umeda… - 29th Annual Proceedings …, 1991 - ieeexplore.ieee.org
AC hot-carrier effects with complete precautions against the wiring inductance noises were
investigated to get a universal guideline from the viewpoints of AC conditions and device …

AC hot-carrier effects in scaled MOS devices

E Takeda, R Izawa, K Umeda, R Nagai - 29th Annual Proceedings Reliability … - infona.pl
AC hot-carrier effects with complete precautions against the wiring inductance noises were
investigated to get a universal guideline from the viewpoints of AC conditions and device …

[引用][C] Hot-carrier effects in sclaed MOS devices

E TAKEDA - Microelectronics and reliability, 1993 - Elsevier