Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach

P Sharma, S Tyaginov, SE Rauch… - IEEE Electron …, 2016 - ieeexplore.ieee.org
We extend our previously suggested drift-diffusion (DD)-based hot-carrier degradation
model to the case of decananometer transistors. Special attention is paid to the effect of …
被引用次数：11 相关文章

[引用][C] Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach

P Sharma, S Tyaginov, SE Rauch III, J Franco… - 2017 - imec-publications.be
Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion
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[引用][C] Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach

P Sharma, S Tyaginov, SE Rauch… - IEEE Electron …, 2017 - repositum.tuwien.at
reposiTUm: Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the
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[引用][C] Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach

P Sharma, S Tyaginov, SE Rauch… - IEEE Electron …, 2017 - ui.adsabs.harvard.edu
Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion
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