Analyzing hot-carrier effects on cold CMOS devices

H Wang - IEEE transactions on electron devices, 1987 - ieeexplore.ieee.org
The operation of discrete and integrated CMOS ring oscillators was evaluated over the
temperature range 77-300 K. Gate delays typically decreased by a factor of two at 77 K. Hot …
被引用次数：25 相关文章

[引用][C] Analyzing hot-carrier effects on cold CMOS devices

SB BIBYK, HAI WANG… - IEEE transactions on …, 1987 - pascal-francis.inist.fr
Analyzing hot-carrier effects on cold CMOS devices CNRS Inist Pascal-Francis CNRS
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[引用][C] Analyzing hot-carrier effects on cold CMOS devices

SB Bibyk, H Wang, P Borton - IEEE Transactions on Electron …, 1987 - ui.adsabs.harvard.edu
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[引用][C] Analyzing hot-carrier effects on cold CMOS devices

SB BIBYK, HAI WANG… - IEEE …, 1987 - Institute of Electrical and Electronics …