Low power FinFET based 10T SRAM cell
Memory occupies more than 70 percent of area in today's system on chip and the trends
continue to be increases in coming years. As the technology is scaling the bulk MOSFET …
continue to be increases in coming years. As the technology is scaling the bulk MOSFET …
[引用][C] Low Power FinFET based 10T SRAM cell
N Kaur, N Gupta, H Pahuja, B Singh, S Panday… - Elsevier
[PDF][PDF] Low Power FinFET Based 10T SRAM Cell
N Kaur, N Gupta, H Pahuja, B Singh, S Panday - researchgate.net
Memory occupies more than 70 percent of area in today's system on chip and the trends
continue to be increases in coming years. As the technology is scaling the bulk MOSFET …
continue to be increases in coming years. As the technology is scaling the bulk MOSFET …