Densification and grain growth of Al-doped ZnO
J Han, PQ Mantas, AMR Senos - Journal of Materials Research, 2001 - cambridge.org
The densification and grain growth of ZnO doped with Al from 0.08 to 1.2 mol% were
investigated during isothermal sintering between 1100 and 1400° C. The Al dopant …
investigated during isothermal sintering between 1100 and 1400° C. The Al dopant …
Densification and grain growth of Al-doped ZnO
J Han, PQ Mantas, AMR Senos - Journal of Materials Research, 2001 - Springer
The densification and grain growth of ZnO doped with Al from 0.08 to 1.2 mol% were
investigated during isothermal sintering between 1100 and 1400° C. The Al dopant …
investigated during isothermal sintering between 1100 and 1400° C. The Al dopant …
Densification and grain growth of Al-doped ZnO
J Han, PQ Mantas, AMR Senos - Journal of Materials Research, 2001 - cir.nii.ac.jp
抄録< jats: p> The densification and grain growth of ZnO doped with Al from 0.08 to 1.2
mol% were investigated during isothermal sintering between 1100 and 1400 C. The Al …
mol% were investigated during isothermal sintering between 1100 and 1400 C. The Al …
[引用][C] Densification and grain growth of Al-doped ZnO
J Han, PQ Mantas, AMR Senos - Journal of Materials …, 2001 - ui.adsabs.harvard.edu
Densification and grain growth of Al-doped ZnO - NASA/ADS Now on home page ads icon
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[PDF][PDF] Densification and grain growth of Al-doped ZnO
J Han, PQ Mantas, AMR Senos - J. Mater. Res, 2001 - researchgate.net
The densification and grain growth of ZnO doped with Al from 0.08 to 1.2 mol% were
investigated during isothermal sintering between 1100 and 1400 C. The Al dopant …
investigated during isothermal sintering between 1100 and 1400 C. The Al dopant …
Densification and grain growth of Al-doped ZnO
J Han, PQ Mantas, AMR Senos - J. Mater. Res, 2001 - cambridge.org
The densification and grain growth of ZnO doped with Al from 0.08 to 1.2 mol% were
investigated during isothermal sintering between 1100 and 1400 C. The Al dopant …
investigated during isothermal sintering between 1100 and 1400 C. The Al dopant …