Embedded very fast switching module for SiC power MOSFETs

G Feix, E Hoene, O Zeiter… - Proceedings of PCIM …, 2015 - ieeexplore.ieee.org
The development of very fast switching semiconductors based on silicon carbide (SiC) offers
many opportunities. Switching speed and pulse frequency can be increased significantly …
被引用次数：42 相关文章

Embedded Very Fast Switching Module for SiC Power MOSFETs

G Feix, E Hoene, O Zeiter, K Pedersen - vde-verlag.de
The development of very fast switching semiconductors based on silicon carbide (SiC) offers
many opportunities. Switching speed and pulse frequency can be increased significantly …

[引用][C] Embedded Very Fast Switching Module for SiC Power MOSFETs

G Feix, E Hoene, O Zeiter, KB Pedersen - PCIM 2015, 2015 - vbn.aau.dk
Embedded Very Fast Switching Module for SiC Power MOSFETs — Aalborg University's
Research Portal Skip to main navigation Skip to search Skip to main content Aalborg University's …

Embedded very fast switching module for SiC power MOSFETs

G Feix, E Hoene, O Zeiter, K Pedersen - 2015 - publica.fraunhofer.de
The development of very fast switching semiconductors based on silicon carbide (SiC) offers
many opportunities. Switching speed and pulse frequency can be increased significantly …