GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm

J Richter, J Strassner, TH Loeber, H Fouckhardt… - Journal of Crystal …, 2014 - Elsevier
We report on the epitaxial growth of GaSb quantum dots (QDs) that show
photoluminescence at a wavelength of around 1.3 µm and a high hole localization energy of …
被引用次数：14 相关文章

GaSb quantum dots on GaAs with high localization energy of 710meV and an emission wavelength of 1.3 µm

J Richter, J Strassner, TH Loeber, H Fouckhardt… - Journal of Crystal …, 2014 - infona.pl
We report on the epitaxial growth of GaSb quantum dots (QDs) that show
photoluminescence at a wavelength of around 1.3 µm and a high hole localization energy of …

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

J Richter, J Strassner, TH Loeber… - Journal of Crystal …, 2014 - ui.adsabs.harvard.edu
We report on the epitaxial growth of GaSb quantum dots (QDs) that show
photoluminescence at a wavelength of around 1.3 μm and a high hole localization energy of …

[引用][C] GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

J RICHTER, J STRASSNER, TH LOEBER… - Journal of crystal …, 2014 - pascal-francis.inist.fr
GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission
wavelength of 1.3 μm CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

[引用][C] GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

J RICHTER, J STRASSNER, TH LOEBER… - Journal of crystal …, 2014 - Elsevier