[HTML][HTML] Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang, S Liu… - Scientific reports, 2016 - nature.com
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang, S Liu, B Li… - 2016 - scholarbank.nus.edu.sg
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds… - Scientific …, 2016 - pubmed.ncbi.nlm.nih.gov
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang… - Scientific …, 2016 - ui.adsabs.harvard.edu
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang… - arXiv preprint arXiv …, 2015 - arxiv.org
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

[PDF][PDF] Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang, S Liu, B Li… - researchgate.net
Results Device structure and current distributions. The thin film of Pt (3 nm)/Co (0.2 nm)/Ni
(0.4 nm)/Co (0.2 nm)/Pt (2 nm) was fabricated by magneton sputtering on Silicon oxide …

Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang… - Scientific … - eprints.nottingham.ac.uk
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …

[PDF][PDF] Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang, S Liu, B Li… - cyberleninka.org
Results Device structure and current distributions. The thin film of Pt (3 nm)/Co (0.2 nm)/Ni
(0.4 nm)/Co (0.2 nm)/Pt (2 nm) was fabricated by magneton sputtering on Silicon oxide …

[PDF][PDF] Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yang, K Cai, H Ju, KW Edmonds, G Yang, S Liu, B Li… - core.ac.uk
Results Device structure and current distributions. The thin film of Pt (3 nm)/Co (0.2 nm)/Ni
(0.4 nm)/Co (0.2 nm)/Pt (2 nm) was fabricated by magneton sputtering on Silicon oxide …

[PDF][PDF] Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices

M Yangͷ, K Caiͷ, H Ju, KW Edmonds, G Yangͺ, S Liu… - repository.hkust.edu.hk
Current induced magnetization switching by spin-orbit torques offers an energy-efficient
means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The …