The energy-driven paradigm of NMOSFET hot-carrier effects
IEEE Transactions on Device and Materials Reliability, 2005 - ieeexplore.ieee.org
As negative-MOSFET (NMOSFET) size and voltage are scaled down, the electron-energy
distribution becomes increasingly dependent only on the applied bias, because of quasi …
distribution becomes increasingly dependent only on the applied bias, because of quasi …
[PDF][PDF] The Energy-Driven Paradigm of NMOSFET Hot-Carrier Effects
SE Rauch III, G La Rosa - IEEE TRANSACTIONS ON DEVICE …, 2005 - researchgate.net
As negative-MOSFET (NMOSFET) size and voltage are scaled down, the electron-energy
distribution becomes increasingly dependent only on the applied bias, because of quasi …
distribution becomes increasingly dependent only on the applied bias, because of quasi …
[引用][C] The energy-driven paradigm of NMOSFET hot-carrier effects
SE Rauch, G La Rosa - IEEE Transactions on Device and Materials …, 2005 - cir.nii.ac.jp
The energy-driven paradigm of NMOSFET hot-carrier effects | CiNii Research CiNii 国立情報学
研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学 …
研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学 …
The energy-driven paradigm of NMOSFET hot-carrier effects
SER Iii, G La Rosa - IEEE T-DMR, 2005 - research.ibm.com
As negative-MOSFET (NMOSFET) size and voltage are scaled down, the electron-energy
distribution becomes increasingly dependent only on the applied bias, because of quasi …
distribution becomes increasingly dependent only on the applied bias, because of quasi …
The energy driven paradigm of NMOSFET hot carrier effects
SE Rauch, G La Rosa - 2005 IEEE International Reliability …, 2005 - ieeexplore.ieee.org
As NMOSFET size and voltage are scaled down, the electron energy distribution becomes
increasingly dependent only on the applied bias, because of quasi-ballistic transport over …
increasingly dependent only on the applied bias, because of quasi-ballistic transport over …