Challenges regarding parallel connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski… - … on Power Electronics, 2012 - ieeexplore.ieee.org
State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to
be used in high-power converters. It is, therefore, necessary to connect several switches in …
被引用次数：149 相关文章

Challenges regarding parallel-connection of SiC JFETs

D Peftitsis, R Baburske, J Rąbkowski, J Lutz… - … Conference on Power …, 2011 - repo.pw.edu.pl
Considering the present development of the available Silicon Carbide switches, their current
ratings are so low that they cannot be used for high-power converters. It is therefore …

[引用][C] Challenges Regarding Parallel Connection of SiC JFETs

D PEFTITSIS, R BABURSKE… - IEEE transactions …, 2013 - pascal-francis.inist.fr
Challenges Regarding Parallel Connection of SiC JFETs CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …

Challenges regarding parallel-connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski… - … on Power Electronics …, 2011 - ieeexplore.ieee.org
Considering the present development of the available Silicon Carbide switches, their current
ratings are so low that they cannot be used for high-power converters. It is therefore …

Challenges Regarding Parallel-Connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski, J Lutz… - ICPE (ISPE) …, 2011 - dbpia.co.kr
Considering the present development of the available Silicon Carbide switches, their current
ratings are so low that they cannot be used for high-power converters. It is therefore …

Challenges Regarding Parallel Connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski, J Lutz… - IEEE Transactions on …, 2013 - infona.pl
State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to
be used in high-power converters. It is, therefore, necessary to connect several switches in …

[引用][C] Challenges Regarding Parallel Connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski… - IEEE Transactions …, 2013 - ui.adsabs.harvard.edu
Challenges Regarding Parallel Connection of SiC JFETs - NASA/ADS Now on home page
ads icon ads Enable full ADS view NASA/ADS Challenges Regarding Parallel Connection of …

Challenges regarding parallel connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski, J Lutz… - IEEE transactions on …, 2013 - diva-portal.org
State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to
be used in high-power converters. It is, therefore, necessary to connect several switches in …

Challenges regarding parallel-connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski, J Lutz… - IEEE 8th International …, 2011 - swepub.kb.se
Considering the present development of the available Silicon Carbide switches, their current
ratings are so low that they cannot be used for high-power converters. It is therefore …

Challenges regarding parallel-connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski, J Lutz… - … Conference on Power … - infona.pl
Considering the present development of the available Silicon Carbide switches, their current
ratings are so low that they cannot be used for high-power converters. It is therefore …