WSe2 Photovoltaic Device Based on Intramolecular p–n Junction

Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen… - Small, 2019 - Wiley Online Library
High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit,
because of their unique properties such as flexibility, high absorption, and high tunability …

WSe2 Photovoltaic Device Based on Intramolecular p–n Junction

Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen… - Small, 2019 - cir.nii.ac.jp
抄録< jats: title> Abstract</jats: title>< jats: p> High quality p–n junctions based on 2D
layered materials (2DLMs) are urgent to exploit, because of their unique properties such as …

WSe2 Photovoltaic Device Based on Intramolecular pn Junction.

Y Tang, Z Wang, P Wang, F Wu, Y Wang… - Small (Weinheim an …, 2019 - europepmc.org
High quality pn junctions based on 2D layered materials (2DLMs) are urgent to exploit,
because of their unique properties such as flexibility, high absorption, and high tunability …

[PDF][PDF] WSe2 photovoltaic device based on intramolecular p–n junction

Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen… - Small, 2019 - drive.google.com
The p–n junction is one of the most important basic structures in the semiconductor field,
with vast applications in photodetectors,[1, 2] transistors,[3] light emitting diodes, and solar …

WSe2 Photovoltaic Device Based on Intramolecular pn Junction

Y Tang, Z Wang, P Wang, F Wu… - … (Weinheim an der …, 2019 - pubmed.ncbi.nlm.nih.gov
High quality pn junctions based on 2D layered materials (2DLMs) are urgent to exploit,
because of their unique properties such as flexibility, high absorption, and high tunability …