WSe2 Photovoltaic Device Based on Intramolecular p–n Junction
High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit,
because of their unique properties such as flexibility, high absorption, and high tunability …
because of their unique properties such as flexibility, high absorption, and high tunability …
WSe2 Photovoltaic Device Based on Intramolecular p–n Junction
Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen… - Small, 2019 - cir.nii.ac.jp
抄録< jats: title> Abstract</jats: title>< jats: p> High quality p–n junctions based on 2D
layered materials (2DLMs) are urgent to exploit, because of their unique properties such as …
layered materials (2DLMs) are urgent to exploit, because of their unique properties such as …
WSe2 Photovoltaic Device Based on Intramolecular pn Junction.
Y Tang, Z Wang, P Wang, F Wu, Y Wang… - Small (Weinheim an …, 2019 - europepmc.org
High quality pn junctions based on 2D layered materials (2DLMs) are urgent to exploit,
because of their unique properties such as flexibility, high absorption, and high tunability …
because of their unique properties such as flexibility, high absorption, and high tunability …
[PDF][PDF] WSe2 photovoltaic device based on intramolecular p–n junction
Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen… - Small, 2019 - drive.google.com
The p–n junction is one of the most important basic structures in the semiconductor field,
with vast applications in photodetectors,[1, 2] transistors,[3] light emitting diodes, and solar …
with vast applications in photodetectors,[1, 2] transistors,[3] light emitting diodes, and solar …
WSe2 Photovoltaic Device Based on Intramolecular pn Junction
Y Tang, Z Wang, P Wang, F Wu… - … (Weinheim an der …, 2019 - pubmed.ncbi.nlm.nih.gov
High quality pn junctions based on 2D layered materials (2DLMs) are urgent to exploit,
because of their unique properties such as flexibility, high absorption, and high tunability …
because of their unique properties such as flexibility, high absorption, and high tunability …