[HTML][HTML] ST-MRAM gets practical

JM Slaughter, ND Rizzo - ST-MRAM, Technical Brief, 2013 - ebinder.blogger.idv.tw
Wordline drivers run vertically through the center of each of eight 8-Mb banks. Strips of …
64-Mb devices, which apply new circuit techniques to address specific challenges of ST-MRAM. …

使用每行獨立時序控制之架構以提高良率的靜態隨機存取記憶體

MY Chang - 清華大學積體電路設計產業研發碩士專班學位論文, 2007 - airitilibrary.com
… This thesis presents a new timing-tracking scheme in an SRAM design for enhancing the …
sense amplifier can be turned on at the right time and the pulse width of the active wordline can …

用于低电压下SRAM 灵敏放大器工艺变化鲁棒性时序的多级双复制位线延迟技术

S Tan, W Lu, C Peng, Z Li, Y Tao, J Chen, T Multi… - Frontiers, 2015 - jzus.zju.edu.cn
… Multi-stage dual replica bit-line delay technique for process-variation-robust timing of low
voltage SRAM sense amplifier[J]. Frontiers of Information Technology & Electronic Engineering…

低功率時間共享多線程暫存器

郭于玄, 黃威 - 2008 - ir.lib.nycu.edu.tw
… 2.6(a), where both SRAM-VCC and wordline driver are on a … Several low power techniques
are proposed in this chapter, … replica circuit detects which timing the SA and wordline

具有寫入輔助電路的穩健低功率靜態隨機存取記憶體

賴思詠, 黃威 - 2008 - ir.lib.nycu.edu.tw
Low power SRAM design techniques are given in Chapter 3 … In this chapter, the basic concepts
of wordline replica circuit … In this chapter, a low power embedded SRAM with wide supply …

寬操作區域之靜態隨機存取記憶體設計

蘇翊傑 - 臺灣大學電子工程學研究所學位論文, 2018 - airitilibrary.com
… can help achieve low power consumption and high energy efficiency. In this thesis, we
realized a low-voltage SRAM which can … A replica technique for wordline and sense control in …

超低功率抗雜訊8T 靜態隨機存取記憶體的設計與實現

夏茂墀, 莊景德 - 2010 - ir.lib.nycu.edu.tw
… This thesis presents a power control technique to minimize … using divided word-line or
single-bit line cross point SRAM cell. … novel 8T SRAM cell and the Ultra-Low-Power structure are …

40 奈米1.0 Mb 6T 管線化靜態隨機存取記憶體與三步階升壓型字元線和位元線降壓和適應性電壓偵測

廖偉男, 莊景德 - 2012 - ir.lib.nycu.edu.tw
… 6T SRAM with these techniques with two stage pipeline … , and implement by way of tape out
in the 40nm Low- Power … we can use another method which is the Dynamic Word-Line Level. …

近/次臨界靜態隨機存取記憶體為基礎的先進先出記憶體設計於近身無線網路的設計和實作

杜威宏, 黃威 - 2011 - ir.lib.nycu.edu.tw
control circuit, counter-based pointers, and a smart replica … Chapter 2 presents the low
power SRAM memory form basic … a word-line, the half-selected 8T cells on the same word-line

適用於高能源效率晶片之可感知變異超低電壓設計

張銘宏, 黃威 - 2011 - ir.lib.nycu.edu.tw
… the proposed 9T SRAM bit-cell with additional write-wordlines (… control circuit, counter-based
pointers, and a smart replica … overhead if the period of low-power mode is longer than 48.66…