… (2009) Direct observation of a widely tunable band gap in bilayer graphene. Nature, 459,
820-823. [29] Mayorov, AS, Gorbachev, RV, Morozov, SV, Britnell, L., Jalil, R., Ponomarenko, …

… Two dimensional materials, represented by graphene, hexagonal boron nitride and metal
dichalcogenides, have been of prominent interest due to a number of exceptional properties …

… band gap of pure single r layer Ag2 s is 0. 530 eV which is smaller than the band gap of bulk
Ag2 … is upward shift that results in the increasing of the band gap. Accord ing to the above …

… Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride
single crystal. Nat Mater, 2004, 3: 404–409 3 Dean CR, Young AF, Meric I, et al. …

… process are often observed on these samples 120,123. The unique structure of the bubble
… strain, such as standing wave oscillation and band structure changes 123,124. However, the …

… However, even graphene has outstanding electrical properties, tuning the electronic structures
is an urgent issue due to the essential gapless. More important, the high-yield synthesis …

… layered hexagonal boron nitride/… band gap values of the synthesized TiO2 is 3.1 eV, and
the value can be decreased to 2.88 eV for 12 wt% h-BN/TiO2, indicating a narrower band gap …

… Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux … of
applications as both a structural and electronic material. As h-BN is of a wide band gap, a ultra-…

… carbon atoms in SiC sheet are hydroxylated, while it exhibits a antiferromagnetic semiconductor
with a direct band gap of 1.12eV appearing at G (0, 0, 0) point in Brillouin zone when all …

… boron and hexagonal boron nitride (h-BN) at 7.5GPa and 1700C, which was suggested to
have a structure … properties of the predicted BN compounds, their electronic band structures …