28‐1: Invited Paper: Effect of Channel Defining Layer on the Vertical Oxide TFTs for the Application to the Ultra High Resolution Display
SID Symposium Digest of Technical Papers, 2017•Wiley Online Library
We investigated the effect of back channel material which plays as a channel defining layer
in vertical TFT for the application to the TFT of ultra‐high resolution display. Although the
IGZO vertical TFT with polyimide back channel has low mobility, it shows good on/off ratio
higher than 107, low gate leakage current, and hard saturation behavior with channel length
of 1 um.
in vertical TFT for the application to the TFT of ultra‐high resolution display. Although the
IGZO vertical TFT with polyimide back channel has low mobility, it shows good on/off ratio
higher than 107, low gate leakage current, and hard saturation behavior with channel length
of 1 um.
We investigated the effect of back channel material which plays as a channel defining layer in vertical TFT for the application to the TFT of ultra‐high resolution display. Although the IGZO vertical TFT with polyimide back channel has low mobility, it shows good on/off ratio higher than 107 , low gate leakage current, and hard saturation behavior with channel length of 1 um.
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