A 300-µW cryogenic HEMT LNA for quantum computing
This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor
(HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum
computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs
using 100-nm gate length InP HEMTs with different indium content in the channel (65% and
80%). The noise performance at 300 K was found to be comparable for both channel
structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise …
(HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum
computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs
using 100-nm gate length InP HEMTs with different indium content in the channel (65% and
80%). The noise performance at 300 K was found to be comparable for both channel
structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise …
[引用][C] A 300-µW Cryogenic HEMT LNA for Quantum Computing, in 2020 IEEE/MTT-S International Microwave Symposium (IMS)
E Cha, N Wadefalk, G Moschetti, A Pourkabirian… - Conference Proceedings, 2020
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