A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS
A Balteanu, I Sarkas, E Dacquay… - 2012 IEEE Radio …, 2012 - ieeexplore.ieee.org
A Balteanu, I Sarkas, E Dacquay, A Tomkins, SP Voinigescu
2012 IEEE Radio Frequency Integrated Circuits Symposium, 2012•ieeexplore.ieee.orgA novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm
SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45
GHz with 18.3 dB saturated gain,>; 14.5 V pp differential output swing, a drain efficiency of
21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at
45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown.
SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45
GHz with 18.3 dB saturated gain,>; 14.5 V pp differential output swing, a drain efficiency of
21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at
45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown.
A novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45 GHz with 18.3 dB saturated gain, >;14.5 V pp differential output swing, a drain efficiency of 21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at 45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown.
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