A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence
2013 IEEE international reliability physics symposium (IRPS), 2013•ieeexplore.ieee.org
A comprehensive NBTI framework using the H/H 2 RD model for interface traps and 2 well
model for hole traps has been proposed and used to predict DC and AC experiments. The
framework is validated against experimental data from different DC stress and recovery
conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG
devices having different gate insulator processes. Limitations of the alternative 2 stage
model framework is discussed.
model for hole traps has been proposed and used to predict DC and AC experiments. The
framework is validated against experimental data from different DC stress and recovery
conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG
devices having different gate insulator processes. Limitations of the alternative 2 stage
model framework is discussed.
A comprehensive NBTI framework using the H/H 2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed.
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