In this study, a modified structure was proposed for the band-to-band tunneling field-effect
transistor (BTBT–FET) mainly to suppress the ambipolar current with the assumption that the
ON state characteristics, especially sub-threshold swing, must not be degraded. The
proposed structure uses a dual-material gate as gate contact and a narrow lightly doped
region at the drain side of the channel. Electrical characteristics of the proposed device were
explored by a mode-space non-equilibrium Green's function (NEGF) formalism in the …