A high stable 8T-SRAM with bit interleaving capability for minimization of soft error rate
The impact of alpha particle and exposure to cosmic radiation has multifold the existing
stability issue associated with modern sub-100 nm SRAM cell design. Noise insertion in the
half selected cell of a SRAM array is another serious issue which degrades the stability of a
cell as well as waste energy through the half selected cells. The proposed highly stable 8T-
SRAM cell takes care of both the above mentioned issues effectively. The cell is capable to
be arranged in a bit-interleaving fashion which can then use a conventional error correction …
stability issue associated with modern sub-100 nm SRAM cell design. Noise insertion in the
half selected cell of a SRAM array is another serious issue which degrades the stability of a
cell as well as waste energy through the half selected cells. The proposed highly stable 8T-
SRAM cell takes care of both the above mentioned issues effectively. The cell is capable to
be arranged in a bit-interleaving fashion which can then use a conventional error correction …
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