A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
Because of the atomic nature of the system under study, an estimation of the temperature of
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be
obtained by means of indirect methods, usually electrothermal simulations. In this paper, a
heuristic approach that combines time-dependent dielectric breakdown (TDDB) statistics for
the electroformed device with field and temperature-assisted ionic transport within the
framework of escape rate theory is presented. Extended expressions for the time-to-failure …
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be
obtained by means of indirect methods, usually electrothermal simulations. In this paper, a
heuristic approach that combines time-dependent dielectric breakdown (TDDB) statistics for
the electroformed device with field and temperature-assisted ionic transport within the
framework of escape rate theory is presented. Extended expressions for the time-to-failure …
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