Because of the atomic nature of the system under study, an estimation of the temperature of
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be
obtained by means of indirect methods, usually electrothermal simulations. In this paper, a
heuristic approach that combines time-dependent dielectric breakdown (TDDB) statistics for
the electroformed device with field and temperature-assisted ionic transport within the
framework of escape rate theory is presented. Extended expressions for the time-to-failure …