A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED
We report the effects of thermal annealing in air and N 2 ambient on the structural, optical,
and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we
report on the fabrication and device characterization of heterojunction light-emitting diodes
based on the n-ZnO/p-GaN systems. In the case of N 2 ambient, room-temperature
electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed
under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to …
and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we
report on the fabrication and device characterization of heterojunction light-emitting diodes
based on the n-ZnO/p-GaN systems. In the case of N 2 ambient, room-temperature
electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed
under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to …
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