In essence, quantum dot dimensions and others can be laterally and vertically defined by
using either bottom up or top down methods respectively. In fabrication that uses top down
method, etch process hold a chief role. Varieties of etch times and oxygen flow rates in
ranges 75–88s and 20–50sccm, respectively, were devised to fabricate optimum dimension
of nanostructure. As a result, as etch time increased, lateral etch rate of silicon quantum dot,
source and drain and also the nanostructure etch depth increased. However, high …